Plasticization effect and the excitation of the electronic subsystem in anLiF single crystal by an ultraweak thermalized-neutron flux in the stress-relaxation regime

Citation
Ag. Lipson et al., Plasticization effect and the excitation of the electronic subsystem in anLiF single crystal by an ultraweak thermalized-neutron flux in the stress-relaxation regime, JETP LETTER, 70(2), 1999, pp. 123-128
Citations number
20
Categorie Soggetti
Physics
Journal title
JETP LETTERS
ISSN journal
00213640 → ACNP
Volume
70
Issue
2
Year of publication
1999
Pages
123 - 128
Database
ISI
SICI code
0021-3640(19990725)70:2<123:PEATEO>2.0.ZU;2-I
Abstract
Plasticization is detected during stress relaxation in uniaxially loaded Li F single crystals irradiated with an ultraweak flux of thermalized neutrons (UFTN) with intensity I(n)similar to 100 neutrons/cm(2)s. It is shown that when loaded LiF samples are irradiated with an UFTN, excitation of the ele ctronic subsystem of the crystal is observed and is manifested in a stimula tion of deformation exoemission of electrons and the generation of F center s. (C) 1999 American Institute of Physics. [S0021-3640(99)01014-2].