A scheme is proposed for measuring the state of an individual spin (system
of spins). The scheme is based on the idea of a single-electron "turnstile"
and the injection of single spin-polarized electrons from the magnetic met
allic borders. Applications to the recently proposed scheme of quantum spin
gates based on a silicon matrix are discussed (B. E. Kane, Nature 393, 133
(1998)). (C) 1999 American Institute of Physics. [S0021-3640(99)01414-0].