Xc. Wang et al., Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing, J APPL PHYS, 86(5), 1999, pp. 2687-2690
In this article, we showed the significant reduction of the energy spacing
between ground state and excited state emissions from InAs/GaAs quantum dot
s (QDs) due to interface interdiffusion induced by thermal treatment. In ad
dition, the strong narrowing of the luminescence linewidth of the ground st
ate and excited state emissions from the InAs dot layers for the annealed s
amples indicates an improvement of the size distribution of the QDs. Large
blueshift of the energy positions of both emissions was also observed. High
resolution x-ray diffraction experiments give strong evidence of the inter
face atom interdiffusion in the annealed samples. This work shows the abili
ty to tune the wavelength for applications like infrared detectors and lase
rs based on intrasubband transitions of self-assembled QDs. (C) 1999 Americ
an Institute of Physics. [S0021-8979(99)05017-3].