Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing

Citation
Xc. Wang et al., Widely tunable intersubband energy spacing of self-assembled InAs/GaAs quantum dots due to interface intermixing, J APPL PHYS, 86(5), 1999, pp. 2687-2690
Citations number
30
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
5
Year of publication
1999
Pages
2687 - 2690
Database
ISI
SICI code
0021-8979(19990901)86:5<2687:WTIESO>2.0.ZU;2-A
Abstract
In this article, we showed the significant reduction of the energy spacing between ground state and excited state emissions from InAs/GaAs quantum dot s (QDs) due to interface interdiffusion induced by thermal treatment. In ad dition, the strong narrowing of the luminescence linewidth of the ground st ate and excited state emissions from the InAs dot layers for the annealed s amples indicates an improvement of the size distribution of the QDs. Large blueshift of the energy positions of both emissions was also observed. High resolution x-ray diffraction experiments give strong evidence of the inter face atom interdiffusion in the annealed samples. This work shows the abili ty to tune the wavelength for applications like infrared detectors and lase rs based on intrasubband transitions of self-assembled QDs. (C) 1999 Americ an Institute of Physics. [S0021-8979(99)05017-3].