Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method

Authors
Yu, LS Qiao, D Lau, SS Redwing, JM Lin, JY Jiang, HX
Citation
Ls. Yu et al., Measurement of the Al mole fraction of bulk AlGaN and AlGaN/GaN heterostructure by photoconductance method, J APPL PHYS, 86(5), 1999, pp. 2696-2699
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
5
Year of publication
1999
Pages
2696 - 2699
Database
ISI
SICI code
0021-8979(19990901)86:5<2696:MOTAMF>2.0.ZU;2-U
Abstract
A photoconductance method was used to determine the band-gap energy and, th erefore, the Al mole fraction of bulk AlxGa1-xN and AlxGa1-xN/GaN heterostr uctures. The results are compared with those obtained by a more elaborate p hotoluminescence method. (C) 1999 American Institute of Physics. [S0021-897 9(99)09017-9].