We review the topic of scanning tunnelling microscopy (STM) studies of sili
cides, with an emphasis on fundamental scientific issues that can be addres
sed using STM and ballistic-electron-emission microscopy (BEEM). The discus
sion is organized according to the topics of structure (atomic scale precur
sors, surface reconstructions, bulk structures, interfaces) kinetics and gr
owth (direct atomic measurement, modelling, stoichiometry, layer and island
growth, phase transitions and nanoscale metallization) and BEEM (method, b
and structure, Schottky barrier, defect scattering, inelastic scattering an
d surface effects). These topics are described in general terms, then elabo
rated with specific examples.