Scanning tunnelling microscopy studies of silicides

Citation
Pa. Bennett et H. Von Kanel, Scanning tunnelling microscopy studies of silicides, J PHYS D, 32(15), 1999, pp. R71-R87
Citations number
144
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS D-APPLIED PHYSICS
ISSN journal
00223727 → ACNP
Volume
32
Issue
15
Year of publication
1999
Pages
R71 - R87
Database
ISI
SICI code
0022-3727(19990807)32:15<R71:STMSOS>2.0.ZU;2-X
Abstract
We review the topic of scanning tunnelling microscopy (STM) studies of sili cides, with an emphasis on fundamental scientific issues that can be addres sed using STM and ballistic-electron-emission microscopy (BEEM). The discus sion is organized according to the topics of structure (atomic scale precur sors, surface reconstructions, bulk structures, interfaces) kinetics and gr owth (direct atomic measurement, modelling, stoichiometry, layer and island growth, phase transitions and nanoscale metallization) and BEEM (method, b and structure, Schottky barrier, defect scattering, inelastic scattering an d surface effects). These topics are described in general terms, then elabo rated with specific examples.