Effects of native oxide coating on electromigration in Mg-containing Al-Sialloys

1.6 wt% Mg-containing Al-1.0 wt% Si films exposed to air during the lifetim e test have been investigated for electromigration resistance. The films wi th Al2O3 or MgO dielectrics near the metal surface are more effective for i ncreasing electromigration resistance and, thus, also extend the lifetime a nd enhance the activation energy up to 0.79 eV.