Effect of postoxidation annealing on Si/SiO2 interface roughness

We use a plan-view transmission electron microscope technique to unambiguou sly image the "physical" interface position between Si and furnace grown Si O2 layers. The effect of postoxidation annealing on the interface roughness of Si/SiO2 was studied with this technique. While no obvious effect due to postoxidation annealing on roughness was observed for silicon (111) a post oxidation annealing at 900 degrees C dramatically removed roughness at Si(1 00)/SiO2 interfaces. A model was developed to explain our experimental resu lts based on the idea of kinetic smoothening and oxidation induced rougheni ng. Qualitative agreement has been reached. (C) 1999 The Electrochemical So ciety. S0013-4651(98)05-046-0. All rights reserved.