Influence of retarding hydrogen diffusion in boron phosphosilicate glass on annealing damage of metal-oxide semiconductor transistors

This paper reports results on an investigation of the influence of titanium film in interconnects on incomplete transistor annealing. Annealing damage may be impeded when titanium directly overlays transistors. This may be du e to not only gettering of hydrogen by titanium films but also to retarding hydrogen diffusion of the interlayer between the gate electrode of transis tors and the titanium-containing interconnects in boron phosphosilicate gla ss. The hydrogen diffusion coefficient in the boron phosphosilicate glass f ilm was approximately 3 x 10(-10) cm(2)/s at 400 degrees C, which is three orders of magnitude smaller than that in the thermal oxide. (C) 1999 The El ectrochemical Society. S0013-4651(98)11-030-3. All rights reserved.