DIFFUSION OF THE SILICON DIMER ON SI(001) - NEW POSSIBILITIES AT 450 K

Citation
B. Borovsky et al., DIFFUSION OF THE SILICON DIMER ON SI(001) - NEW POSSIBILITIES AT 450 K, Physical review letters, 78(22), 1997, pp. 4229-4232
Citations number
19
Categorie Soggetti
Physics
Journal title
ISSN journal
00319007
Volume
78
Issue
22
Year of publication
1997
Pages
4229 - 4232
Database
ISI
SICI code
0031-9007(1997)78:22<4229:DOTSDO>2.0.ZU;2-N
Abstract
We report on the discovery of a novel diffusion pathway for silicon di mers on the Si(001) surface. As a small molecule, the dimer's configur ation can play a central role in its diffusion. Using scanning tunneli ng microscopy movies at temperatures near 450 K, we show, in real time , changes in the dimer's configuration during its diffusion. These cha nges in configuration provide a pathway for diffusion across the subst rate dimer rows, unlike the well-known diffusion along the dimer rows. The important energies involved in dimer row crossing are measured.