In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots

Citation
Js. Lee et al., In situ ellipsometric study of the formation process of metalorganic vapor-phase epitaxy-grown quantum dots, J VAC SCI B, 17(4), 1999, pp. 1341-1345
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
10711023 → ACNP
Volume
17
Issue
4
Year of publication
1999
Pages
1341 - 1345
Database
ISI
SICI code
1071-1023(199907/08)17:4<1341:ISESOT>2.0.ZU;2-S
Abstract
Our in situ ellipsometry study of metalorganic vapor-phase epitaxy-grown qu antum dot (QD) structures showed that the Delta-Psi trajectory of the ellip sometric signal in Stranski-Krastanow QD growth sharply differs from that i n layer-by-layer growth. When QD formation starts, a rapidly decreases, inf lecting the Delta-Psi trajectory. This indicates increased scattering loss, deduced from increased surface roughness produced in the transition from t wo- to three-dimensional surface morphology. Ex situ atomic force microscop y and photoluminescence results correspond well to the ellipsometric signal at the start of QD formation. Based on these results, we discuss growth-de pendent QD formation processes such as QD formation onset and growth mode t ransition. (C) 1999 American Vacuum Society. [S0734-211X(99)02304-5].