Low-energy electron-beam lithography using calixarene

Low-energy electron-beam lithography using calixarene as a negative electro n resist has been investigated in the energy range between 0.5 and 20 keV. The suitability of electron energies down to 2 keV with a writing resolutio n of about 10 nm is clearly demonstrated. At low electron energies the requ ired electron dose is drastically reduced. Moreover, irradiation damage dur ing the exposure of a high-mobility two-dimensional electron gas using cali xarene plays no significant role in the low-energy regime. (C) 1999 America n Vacuum Society. [S0734-211X(99)60804-5].