The operation and performance of semiconductor electronic and optoelectroni
c quantum-heterostructures devices are critically dependent on the quasibou
nd states of these structures. In this paper a unified set of four numerica
l methods is presented that are capable of determining the quasibound-state
eigen-energies and their lifetimes in quantum heterostructures having arbi
trary potential profiles. The methods are applicable to symmetric, asymmetr
ic, unbiased or biased devices. All the numerical approaches solve the sing
le-band effective-mass Schrodinger equation. The numerical methods are show
n to be both numerically efficient and accurate. (C) 1999 Elsevier Science
Ltd. All rights reserved.