Parameterization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors

Citation
C. Lee et Nr. Fletcher, Parameterization of the pulse height defect and resolution for low-Z ions incident on silicon barrier detectors, NUCL INST A, 432(2-3), 1999, pp. 313-317
Citations number
13
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
432
Issue
2-3
Year of publication
1999
Pages
313 - 317
Database
ISI
SICI code
0168-9002(19990811)432:2-3<313:POTPHD>2.0.ZU;2-F
Abstract
The pulse height output of silicon charged particle detectors has been stud ied for low Z particles having energies in the range of 1-5 MeV/amu. Partic le beams of Li-7, Be-9, B-11, C-12, and O-16 nuclei were scattered from Au- 197 targets and their energies were measured with two silicon surface barri er detectors, For alpha-particle detection, both beam particles and those f rom a calibrated Th-228 source were used. The data are anomalous in that th e pulse heights for different ions of the same energy increase with atomic number, contrary to observations for fission fragments. It is found that th e pulse height output of the detectors and the width of the pulse height di stribution (FWHM) increase with the Z and Z(2), respectively, of the detect ed particle, (C) 1999 Elsevier Science B.V. All rights reserved.