Influences of thicknesses of SiO2 layers on electroluminescence from amorphous Si/SiO2 superlattices

Amorphous Si/SiO2 superlattices, with four periods, have been grown using t he two-target alternation magnetron sputtering technique. The thicknesses o f Si layers in all the superlattices are 1.0 nm, and those of SiO2 layers i n six types of the superlattices are 1.0, 1.5, 2.0, 2.5, 3.0, and 3.5 nm. E lectroluminescence (EL) from the Au/(Si/SiO2) superlattice/p-Si samples has been observed at a forward bias about 5 V or larger. The influences on the EL spectra from the thicknesses of SiO2 layers in the amorphous Si/SiO2 su perlattices and from input electrical power are studied systematically. (C) 1999 Elsevier Science B.V. All rights reserved.