Intense green light from a silyl-substituted poly(p-phenylenevinylene)-based light-emitting diode with air-stable cathode

Citation
Zk. Chen et al., Intense green light from a silyl-substituted poly(p-phenylenevinylene)-based light-emitting diode with air-stable cathode, PCCP PHYS C, 1(16), 1999, pp. 3789-3792
Citations number
22
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
PCCP PHYSICAL CHEMISTRY CHEMICAL PHYSICS
ISSN journal
14639076 → ACNP
Volume
1
Issue
16
Year of publication
1999
Pages
3789 - 3792
Database
ISI
SICI code
1463-9076(1999)1:16<3789:IGLFAS>2.0.ZU;2-U
Abstract
A silicon-containing poly(p-phenylenevinylene) derivative, poly[2,5-bis(but yldimethylsilyl)-1,4-phenylenevinylene] (BS-PPV), was synthesized via the G ilch reaction. The polymer is fully solution processable with high thermal stability. The UV-Vis absorption and fluorescent emission spectra demonstra te that BS-PPV is a promising green emissive material for light-emitting de vice application. Cyclic voltammetric measurements indicate that it can be reversibly n-doped and irreversibly p-doped with the onset oxidation and re duction potentials of 1.16 and -1.81 V, respectively. The HOMO and LUMO ene rgy levels of BS-PPV were estimated to be 5.56 and 2.59 eV, respectively. S ingle layer devices with the configuration ITO/BS-PPV/Al were fabricated, w hich showed a turn-on voltage of 6 V and intense green light was observed a t around 7.5 V. The performance is better than that of devices fabricated w ith other silicon-containing PPV-based polymers.