Zk. Chen et al., Intense green light from a silyl-substituted poly(p-phenylenevinylene)-based light-emitting diode with air-stable cathode, PCCP PHYS C, 1(16), 1999, pp. 3789-3792
A silicon-containing poly(p-phenylenevinylene) derivative, poly[2,5-bis(but
yldimethylsilyl)-1,4-phenylenevinylene] (BS-PPV), was synthesized via the G
ilch reaction. The polymer is fully solution processable with high thermal
stability. The UV-Vis absorption and fluorescent emission spectra demonstra
te that BS-PPV is a promising green emissive material for light-emitting de
vice application. Cyclic voltammetric measurements indicate that it can be
reversibly n-doped and irreversibly p-doped with the onset oxidation and re
duction potentials of 1.16 and -1.81 V, respectively. The HOMO and LUMO ene
rgy levels of BS-PPV were estimated to be 5.56 and 2.59 eV, respectively. S
ingle layer devices with the configuration ITO/BS-PPV/Al were fabricated, w
hich showed a turn-on voltage of 6 V and intense green light was observed a
t around 7.5 V. The performance is better than that of devices fabricated w
ith other silicon-containing PPV-based polymers.