Citation
Aa. Petrov et al., Changes of the thermally oxidized porous silicon conductivity induced by adsorption and electric field, PHYS LOW-D, 7-8, 1999, pp. 1-7
Citations number
9
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467
→ ACNP
Volume
7-8
Year of publication
1999
Pages
1 - 7
Database
ISI
SICI code
0204-3467(1999)7-8:<1:COTTOP>2.0.ZU;2-6
Abstract
Thermal oxidation of porous silicon was demonstrated to reduce drastically
the adsorption sensitivity of the porous layer conductivity. Considerable i
ncrease of the conductivity of silicon-oxidized porous silicon-metal struct
ures placed in water or ethanol vapor under forward voltage has been observ
ed. The effect was attributed to the modulation of conductivity of non-oxid
ized cores of porous silicon wires by the mobile ion charge drifting along
the oxide surfaces.