Electroluminescence from quantum dots in n-type porous silicon

Citation
Ye. Babanov et al., Electroluminescence from quantum dots in n-type porous silicon, PHYS LOW-D, 7-8, 1999, pp. 77-80
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICS OF LOW-DIMENSIONAL STRUCTURES
ISSN journal
02043467 → ACNP
Volume
7-8
Year of publication
1999
Pages
77 - 80
Database
ISI
SICI code
0204-3467(1999)7-8:<77:EFQDIN>2.0.ZU;2-E
Abstract
The intense narrow peaks have been observed in the electroluminescence spec tra of the n-type nanoporous silicon under special conditions. The peaks ar e attributed to the separated nanocrystals which behave as quantum dots in a dielectric matrix.