Raman E-o resonance in a system of germanium quantum dots

Resonant Raman scattering by optical phonons in Si\Ge\Si structures with ge rmanium quantum dots has been investigated. We have observed substantial ch anges in the shape and intensity of the E-o resonance in: the temperature r ange of 300-17 K, which has been shown to be caused by fulfillment of a dou ble resonance condition for some of quantum dots from a size distribution. Analysis of the observed resonant curves carried out in a system of discret e quantum levels allows us to obtain the halfwidth of the size distribution function, the damping parameter of the Gamma(2) electronic state and the e nergy splitting of hole states.