Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes

Authors
Lebedev, AA Davydov, DV Zelenin, VV Korogodskii, ML
Citation
Aa. Lebedev et al., Investigation of the effect of surface treatment of a semiconductor on thecharacteristics of 6H-SiC Schottky diodes, SEMICONDUCT, 33(8), 1999, pp. 875-876
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
8
Year of publication
1999
Pages
875 - 876
Database
ISI
SICI code
1063-7826(199908)33:8<875:IOTEOS>2.0.ZU;2-4
Abstract
Capacitance methods are used to investigate Schottky diodes formed on the b asis of epitaxial n-type 6H-SiC layers grown by vapor-phase epitaxy. It is found that the height of the potential barrier and its dependence on the wo rk function of the metal strongly depend on the method used for surface tre atment of the semiconductor. (C) 1999 American Institute of Physics. [S1063 -7826(99)01508-2].