Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface

Authors
Tsatsul'nikov, AF Bedarev, DA Volovik, BV Ivanov, SV Maksimov, MV Musikhin, YG Ledentsov, NN Mel'tser, BY Solov'ev, VA Kop'ev, PS Chernyshov, AY Belousov, MV
Citation
Af. Tsatsul'Nikov et al., Formation of two-dimensional islands in the deposition of ultrathin InSb layers on a GaSb surface, SEMICONDUCT, 33(8), 1999, pp. 886-888
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
8
Year of publication
1999
Pages
886 - 888
Database
ISI
SICI code
1063-7826(199908)33:8<886:FOTIIT>2.0.ZU;2-V
Abstract
It is shown that an array of two-dimensional islands is formed during the g rowth of ultrathin (similar to 1.5 monolayers) InSb layers on a GaSb (100) surface by molecular beam epitaxy. After the deposition of several InSb lay ers separated by narrow barriers, islands of subsequent rows are formed on top of islands of the first row (vertical correlation effect). The formatio n of islands is confirmed by analysis of the photoluminescence spectra. (C) 1999 American Institute of Physics. [S1063-7826(99)01808-6].