Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions

Citation
Ap. Danilova et al., Spatial beam oscillations in stripe lasers utilizing InAsSb/InAsSbP heterojunctions, SEMICONDUCT, 33(8), 1999, pp. 924-928
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTORS
ISSN journal
10637826 → ACNP
Volume
33
Issue
8
Year of publication
1999
Pages
924 - 928
Database
ISI
SICI code
1063-7826(199908)33:8<924:SBOISL>2.0.ZU;2-L
Abstract
Anomalously narrow, single-lobe and double-lobe beam directivity patterns i n the plane of the p-n junction have been observed in lasers constructed fr om InAsSb/InAsSbP heterojunctions emitting at a wavelength of approximately 3.3 mu m. Theoretical near-field and far-field radiation distributions for the laser emission of two beams oscillating across the stripe are obtained on the basis of new concepts of the lasing processes. The single-lobe dire ctivity pattern is obtained for the emission of in-phase beams, and the dou ble lobe is obtained for antiphase beams. Correspondence of the theory with experiment is established. (C) 1999 American Institute of Physics. [S1063- 7826(99)02708-8].