Field effect transistor using poly(o-metoxyaniline) films

Authors
Graeff, CFO Onmori, RK Guimaraes, FEG Faria, RM
Citation
Cfo. Graeff et al., Field effect transistor using poly(o-metoxyaniline) films, SYNTH METAL, 105(3), 1999, pp. 151-153
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
03796779 → ACNP
Volume
105
Issue
3
Year of publication
1999
Pages
151 - 153
Database
ISI
SICI code
0379-6779(19990915)105:3<151:FETUPF>2.0.ZU;2-6
Abstract
A thin-film transistor (TFT) with good carrier mobility and environmental s tability has been fabricated using poly(o-metoxyaniline) (POMA) as the acti ve layer. The carrier mobility has been determined to be approximately 2x10 (-4) cm(2) V-1 s(-1), for the best transistors with low conductivity(< 10(- 7) Omega(-1) cm(-1)). High dynamic ranges have been found, with source-drai n currents varying four orders of magnitude with different gate voltages. ( C) 1999 Elsevier Science S.A. All rights reserved.