Texture of copper films on Ta35Si18N47 and Ti33Si23N44 underlayers

The crystallographic texture and the grain size have been measured by X-ray diffraction techniques for about 200 nm-thick Cu films sputter-deposited o n amorphous Ta35Si18N47 and Ti33Si23N44 underlayers, and for comparison als o on TiN underlayers and oxidized silicon, all on Si (100) substrates. The (111) texture of the as-deposited Cu films increases in the sequence TiN < SiO2 < Ti33Si23N44 < Ta35Si18N47 Amorphous Ta35Si18N47 and Ti33Si23N44 laye rs evidently promote quite effectively the growth of highly (111) textured Cu films. After vacuum annealing at 450 degrees C for 30 min the texture of Cu rises on Ti33Si23N44: falls on Ta35Si18N47, while that on TiN and on Si O2 changes little and the sequence becomes TiN < SiO2 < Ta35Si18N47 < Ti33S i23N44 The grain size of the as-deposited Cu films increases in the sequenc e Ti33Si23N44 < SiO2 < Ta35Si18N47 < Ti47N53 and rises moderately upon anne aling, least for TiN and most for SiO2 and Ti33Si23N44. (C) 1999 Elsevier S cience S.A. All rights reserved.`