Evolution of texture of CeO2 thin film buffer layers prepared by ion-assisted deposition

Evolution of texture in CeO2 thin films was studied using biased magnetron sputtering and ion beam assisted magnetron sputtering. Films deposited onto polycrystalline Hastelloy metal substrates by biased magnetron sputtering develop preferential (002) growth as the energy of the ions is increased fr om zero to above 100 eV. For ion beam assisted magnetron sputtering (magnet ron IBAD), with the ion beam directed at 55 degrees to the substrate normal , the evolution of biaxial alignment is controlled by the ion beam energy a nd the ion/atom arrival rate ratio. Ion beam energies > 200 eV and ion/atom ratios > 0.3 lead to perfect biaxial alignment with one pole aligned along the ion beam direction. Epitaxial growth of CeO2 films was observed for Mg O(001) substrates at 750 degrees C without any ion assistance, and on yttri a-stabilised zirconia (001) buffer layers at room temperature and a bias of - 80 V. (C) 1999 Elsevier Science S.A. All rights reserved.