Many electrical and mechanical properties of a material are influenced mark
edly by the distribution of the individual grain orientations, i.e, its tex
ture. In this paper a new TEM technique is described, along with the analys
is used, to identify the texture in a film. A single diffraction pattern fr
om a scanned area on a polysilicon film on a cross-sectional TEM specimen i
s analysed enabling a semi-quantitative description of the texture of that
area in the film. A series of these diffraction patterns from linescans par
allel to the film surface is used to show how the texture develops through
the film. (C) 1999 Published by Elsevier Science B.V. All rights reserved.