Electro-optic recovery of the photoquenching effect

Authors
Rubinger, RM de Oliveira, AG Ribeiro, GM Bezzera, JC Moreira, MVB Chacham, H
Citation
Rm. Rubinger et al., Electro-optic recovery of the photoquenching effect, APPL PHYS L, 75(9), 1999, pp. 1252-1254
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
9
Year of publication
1999
Pages
1252 - 1254
Database
ISI
SICI code
0003-6951(19990830)75:9<1252:EROTPE>2.0.ZU;2-H
Abstract
We have carried out dynamic low-temperature measurements of the current den sity for a semi-insulating GaAs sample grown at 300 degrees C. The standard photoquenching (PQ) effect was observed at low temperatures. We found that high electric fields inhibit the PQ effect and that the recovery of the PQ effect was made possible by simultaneous application of a high electric fi eld and illuminating the sample with infrared light. (C) 1999 American Inst itute of Physics. [S0003-6951(99)01835-5].