A method of highly efficient hydrolyzation oxidation of III-V semiconductor lattice matched to indium phosphide

Authors
Koley, B Johnson, FG King, O Saini, SS Dagenais, M
Citation
B. Koley et al., A method of highly efficient hydrolyzation oxidation of III-V semiconductor lattice matched to indium phosphide, APPL PHYS L, 75(9), 1999, pp. 1264-1266
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
9
Year of publication
1999
Pages
1264 - 1266
Database
ISI
SICI code
0003-6951(19990830)75:9<1264:AMOHEH>2.0.ZU;2-W
Abstract
We have demonstrated a method of efficient wet oxidation process for device s grown on indium phosphide. It was found that oxidation of a strain compen sated InAs/AlAs short-period superlattice grown on InP proceeds at a rate o f 0.28 mu m/min. An edge-emitting laser using current confinement provided by the oxide has been fabricated. This method might be also well suited for long wavelength vertical cavity surface emitting laser application. (C) 19 99 American Institute of Physics. [S0003-6951(99)01035-9].