Ion beam synthesized Ru2Si3

Authors
Sharpe, JS Chen, YL Gwilliam, RM Kewell, AK McKinty, CN Lourenco, MA Shao, G Homewood, KP Kirkby, KR
Citation
Js. Sharpe et al., Ion beam synthesized Ru2Si3, APPL PHYS L, 75(9), 1999, pp. 1282-1283
Citations number
12
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
9
Year of publication
1999
Pages
1282 - 1283
Database
ISI
SICI code
0003-6951(19990830)75:9<1282:IBSR>2.0.ZU;2-A
Abstract
In this letter we report the synthesis of the semiconductor Ru2Si3 by ion i mplantation into a silicon substrate. The formation of this compound has be en confirmed by x-ray measurements and electron diffraction. The absorption coefficient has been determined directly by optical transmission measureme nts. The band gap is found to be direct with a value in the region of 0.9 e V. (C) 1999 American Institute of Physics. [S0003-6951(99)03435-X].