Wavelength-dependent optical degradation of green II-VI laser diodes

Citation
R. Vogelgesang et al., Wavelength-dependent optical degradation of green II-VI laser diodes, APPL PHYS L, 75(10), 1999, pp. 1351-1353
Citations number
13
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
10
Year of publication
1999
Pages
1351 - 1353
Database
ISI
SICI code
0003-6951(19990906)75:10<1351:WODOGI>2.0.ZU;2-1
Abstract
In this letter we report on optical degradation studies on BeMgZnSe separat e confinement quantum well laser structures for the blue-green spectral reg ion. The wavelength of the incident light has been tuned from 3.81 down to 2.10 eV, corresponding to an energy range from above the band gap of the cl adding layers down to below the band gap of the quantum well. The dominant degradation mechanism is initiated when electron hole pairs are created in the quantum well. Absorption of light in deep defect bands, e.g., of the p- type cladding material is negligible in these structures. The strain state of the quantum well is one possible driving force for the degradation. In t his context, point defect propagation as well as a structural phase transit ion of the ZnCdSe quantum well are discussed. (C) 1999 American Institute o f Physics. [S0003-6951(99)00736-6].