Fabrication of thin-film InGaN light-emitting diode membranes by laser lift-off

Indium-gallium nitride (InGaN) multiple-quantum-well (MQW) light-emitting d iode (LED) membranes, prefabricated on sapphire growth substrates, were cre ated using pulsed-excimer laser processing. The thin-film InGaN MQW LED str uctures, grown on sapphire substrates, were first bonded onto a Si support substrate with an ethyl cyanoacrylate-based adhesive. A single 600 mJ/cm(2) , 38 ns KrF (248 nm) excimer laser pulse was directed through the transpare nt sapphire, followed by a low-temperature heat treatment to remove the sub strate. Free-standing InGaN LED membranes were then fabricated by immersing the InGaN LED/adhesive/Si structure in acetone to release the device from the supporting Si substrate. The current-voltage characteristics and room-t emperature emission spectrum of the LEDs before and after laser lift-off we re unchanged. (C) 1999 American Institute of Physics. [S0003-6951(99)02636- 4].