Displacement measurement and surface profiling using semi-insulating photoconductive semiconductors and linearly frequency-ramped lasers

Citation
F. Jin et al., Displacement measurement and surface profiling using semi-insulating photoconductive semiconductors and linearly frequency-ramped lasers, APPL PHYS L, 75(10), 1999, pp. 1374-1376
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
75
Issue
10
Year of publication
1999
Pages
1374 - 1376
Database
ISI
SICI code
0003-6951(19990906)75:10<1374:DMASPU>2.0.ZU;2-0
Abstract
Target displacement measurement and surface profiling are demonstrated expe rimentally using coherence frequency domain reflectometry and the photo-emf optical difference frequency sensor that was recently shown to generate st eady state dc photocurrents linearly proportional to the optical frequency differences between two laser beams interfering inside semi-insulating phot oconductive semiconductors. The simplicity and spatial adaptivity of photo- emf optical frequency sensors eliminate the stringent requirements of optic al alignment and calculation-intensive signal processing found in conventio nal coherence frequency domain reflectometry systems. (C) 1999 American Ins titute of Physics. [S0003-6951(99)04436-8].