The energy dependence of the conduction band mass in amorphous SiO2 was ded
uced from quantum interference oscillations in the ballistic electron emiss
ion microscope current, and separately from Monte Carlo simulations of the
electron mean free paths obtained by internal photoemission. The results im
ply a strong nonparabolicity of the conduction band of SiO2. (C) 1999 Ameri
can Institute of Physics. [S0003-6951(99)00836-0].