Thin-film CuIn1-xGaxSe2 photovoltaic cells from solution-based precursor layers

We have fabricated 15.4% and 12.4% efficient thin-film CuIn1-xGaxSe2 (CIGS) -based photovoltaic devices from solution-based electrodeposited (ED) and e lectroless-deposited (EL) precursors. As-deposited precursors are Cu-rich C IGS. Additional In, Ga, and Se are added to the ED and EL precursor films b y physical vapor deposition (PVD) to adjust the final semiconductor film co mposition to CuIn1-xGaxSe2. The ED and EL device parameters are compared wi th those of a 17.7% PVD device. The tools used for comparison are current v oltage, capacitance voltage, and spectral response characteristics. (C) 199 9 American Institute of Physics. [S0003-6951(99)03736-5].