Organic nonlinear optical crystal DAST growth and its device applications

Citation
S. Sohma et al., Organic nonlinear optical crystal DAST growth and its device applications, CHEM PHYS, 245(1-3), 1999, pp. 359-364
Citations number
18
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
CHEMICAL PHYSICS
ISSN journal
03010104 → ACNP
Volume
245
Issue
1-3
Year of publication
1999
Pages
359 - 364
Database
ISI
SICI code
0301-0104(19990701)245:1-3<359:ONOCDG>2.0.ZU;2-R
Abstract
The organic ionic salt 4-dimethylamino-N-methyl-4-stilbazolium tosylate (DA ST) is known for its huge nonlinearity among nonlinear crystals, and has ad vantages such as low dielectric constants. This nonlinearity of DAST is bas ed on the large hyperpolarizabilities beta, and it causes large electro-opt ical (E-O) coefficients and nonlinear optical coefficients. With low dielec tric constants to the high-speed devices, the large E-O coefficients genera te the highly efficient E-O modulation and detection in the high-frequency region. In this paper, we report the development of the crystal growth stab ility and reproducibility for large and high-quality DAST by the seed cryst als fixing method. In this method, large enough and crack-free crystals are grown reproducibly with reasonable growth speed. By improved cutting and p olishing processes of DAST crystals, we were able to make samples for devic e applications. With these samples, we demonstrate 60 GHz millimeter wave-f ield monitoring via the large and high-speed E-O effect of DAST. This monit oring system is attractive for applications to ultra-high-speed E-O devices , such as microwave photonics. (C) 1999 Elsevier Science B.V. All rights re served.