First approach to an AlSb layer from the single-source precursors [Et2AlSb(SiMe3)(2)](2) and [(Bu2AlSb)-Bu-i(SiMe3)(2)](2)

AlSb films have been grown on Si(100) and polycrystalline Al2O3 bl: high-va cuum metal-organic chemical vapor deposition (HV-MOCVD) in the temperature range 325-550 degrees C, using the new single-source precursors [Et2AlSb(Si Me3)(2)](2) (1) and [(Bu2AlSb)-Bu-i(SiMe3)(2)](2) (2) without any carrier g as. The best condition for a high quality AlSb film depends on the ligands of the precursor. The AlSb film is deposited at a temperature about 50 degr ees C lower when precursor 1 is used instead of 2. The films are consistent with the 1:1 stoichiometry in the optimized temperature range of 375-425 d egrees C for 1 and 425-475 degrees C for 2, whereas at other temperatures t he films are contaminated with Si. The deposition rate is mainly kinetics l imited and ranges from 5 to 9 mu m/h X-rnv diffraction (XRD) scanning elect ron microscopy (SEM). atomic force microscopy (AFM), energy dispersive X-ra y spectrometry (EDS), and wavelength dispersive spectrometry (WDS) were use d to characterize the films.