Selective metallization of Mg/NH3-treated Teflon by copper CVD

The surface of Teflon, which can be made hydrophilic by a chemical treatmen t in a solution of solvated electrons in the presence of magnesium, can be restored by UV photochemical oxidation under oxygen. The Mg/NH3-treated Tef lon surfaces are easily metallized in a single-step process by copper CVD w hen (VTMS)Cu(hfac) or (MHY)Cu(hfac) are used as precursors (where VTMS = vi nyltrimethylsilane, hfac = hexafluoroacetylacetonate. and MHY = 2-methyl-1- hexene-3-yne). The growth rate of the copper film (thickness 200-500 nm) is between 30 and 50 nm min(-1), depending upon the precursor used. The Cu fi lms, with a resistivity of 1.9 +/- 0.2 mu Omega cm, are pure, as determined by X-ray photoelectron spectroscopy (XPS), Patterned UV irradiation of the treated Teflon results in an identical pattern of copper after CVD, and he nce selective copper deposition can be achieved on Teflon.