Monte-Carlo investigation of in-plane electron transport in tensile strained Si and Si1-yCy (y <= 0.03)

Electron transport properties in tensile strained Si-based materials are th eoretically analyzed using Monte-Carlo calculation. We focus our interest o n in-plane transport in Si and Si1-yCy (y less than or equal to 0.03), grow n respectively on [001] Si1-xGex pseudo-substrate and Si substrate, with a view to Field-Effect-Transistor application. In comparison with unstrained Si, the tensile strain effect is shown to be very attractive in Si: drift m obilities greater than 3000 cm(2)/Vs are obtained at 300 K for a Ge fractio n mole of 0.2 in the pseudo-substrate. In the Si1-yCy/Si system, that does not need any pseudo-substrate, the beneficial strain effect on transport is counterbalanced by the alloy scattering whose influence on mobility is stu died. If the alloy potential is greater than about 1 eV, the advantage of s train-induced reduction of effective mass is lost in terms of stationary tr ansport performance at 300 K.