Rapid thermal processing of PZT thin films using a new triol based sol-gelroute

We have investigated two sol-gel routes, based on 1,3,-propanediol (diol) a nd 1,1,1-tris (hydroxymethyl)ethane (triol), in order to fabricate thin fil ms of lead zirconate titanate (PZT) on platinized silicon (Pt-Si) and plati nized gallium arsenide (Pt-GaAs) substrates. The nominal composition of the PZT was Pb(Zr0.53Ti0.47)O-3 Rapid thermal processing (RTP) techniques were used to produce the films by firing the sol-gel coatings in the temperatur e range 600-900 degrees C for dwell times of 1-900 seconds. A single deposi tion of the precursor sol resulted in films having a thickness of 0.4 mu m. Good electrical properties were observed for PZT thin films deposited on P t-Si when the samples were RTP annealed at 900 degrees C for 1 second, elec trical measurements revealed a remanent polarisation (p(r)(ave)) and coerci ve field (E-c(ave)) of 26 mu C/cm(2) and 27 kV/cm respectively, with a valu e of dielectric constant equal to 1030 at a frequency of 1 MHz. For PZT thi n films deposited on Pt-GaAs, optimum electrical properties were seen when the film was annealed at 650 degrees C for 1 second, measured average value s of p(r)(ave) and E-c(ave) being 24 mu C/cm(2) and 32 kV/cm respectively, with value of dielectric constant equal to 950 at 1 MHz.