W-band InPHEMT MMIC's using finite-ground coplanar waveguide (FGCPW) design

In this paper, we report on the development of W-band monolithic microwave integrated circuit (MMIC) power amplifiers using 0.1-mu m AlInAs/GaInAs/InP high electron mobility transistor (HEMT) technology and finite-ground copl anar waveguide (FGCPW) designs. In the device modeling, the Angelov nonline ar MERIT model was employed to predict the large signal performance of the del;ice, and the results were validated by using state-of-the-art vector lo ad-pull measurements. A two-stage single-ended W-band FGCPW MMIC using a 15 0-mu m-wide MERIT as the driver and a 250-mu m-wide MERIT for the output st age was designed, fabricated, and tested. The MMIC amplifier demonstrates a maximum output power of 18.6 dBm with 18.2% power-added efficiency and 10. 6 dB associated gain at 94 GHz, This result is the best output power to dat e reported from an InP-based MMIC using FGCPW design at this frequency.