The mirrored lateral SCR (MILSCR) as an ESD protection structure: Design and optimization using 2-D device simulation

A methodology for the application of two-dimensional (2-D) device simulatio n to electrostatic discharge (ESD) events is presented. Correlation of ESD simulation results with experimental data is illustrated using a grounded b ase npn transistor, It is shown that device simulation is essential for und erstanding complex ESD failure mechanisms. The application of the methodolo gy to the design of a new ESD protection structure, the mirrored lateral si licon controlled rectifier SCR (MILSCR), is then discussed. Experimental re sults show that the MILSCR provides a very efficient double-polarity ESD pr otection, Last, device simulation is used to optimize this structure for sm art-power applications, In particular, holding currents as high as 134 mA a re achieved, allowing one to cope with the latchup danger during normal ope ration.