Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz

Authors
Lenox, C Nie, H Yuan, P Kinsey, G Homles, AL Streetman, BG Campbell, JC
Citation
C. Lenox et al., Resonant-cavity InGaAs-InAlAs avalanche photodiodes with gain-bandwidth product of 290 GHz, IEEE PHOTON, 11(9), 1999, pp. 1162-1164
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
IEEE PHOTONICS TECHNOLOGY LETTERS
ISSN journal
10411135 → ACNP
Volume
11
Issue
9
Year of publication
1999
Pages
1162 - 1164
Database
ISI
SICI code
1041-1135(199909)11:9<1162:RIAPWG>2.0.ZU;2-0
Abstract
We demonstrated a high-speed, resonant-cavity InGaAs-InAlAs separate absorp tion, charge, and multiplication avalanche photodiode (APD) operating at a wavelength of 1.55 mu m, Due to the resonant-cavity scheme, these APD's exh ibit high external quantum efficiency (similar to 70%) and a high unity-gai n bandwidth of 24 GHz. Utilizing the excellent noise characteristics of a t hin InAlAs multiplication region (kappa similar to 0.18), we have also achi eved a gain-bandwidth product of 290 GHz. These bandwidth results are belie ved to be the highest reported values for APD's operating at 1.55 mu m.