ON THE SCREENING OF INTERSUBBAND SCATTERING IN SEMICONDUCTOR HETEROSTRUCTURES

Citation
R. Riera et al., ON THE SCREENING OF INTERSUBBAND SCATTERING IN SEMICONDUCTOR HETEROSTRUCTURES, Nanostructured materials, 9(1-8), 1997, pp. 701-704
Citations number
5
Categorie Soggetti
Material Science
Journal title
ISSN journal
09659773
Volume
9
Issue
1-8
Year of publication
1997
Pages
701 - 704
Database
ISI
SICI code
0965-9773(1997)9:1-8<701:OTSOIS>2.0.ZU;2-E
Abstract
A brief summary of the self-consistent field method leading to a four- index matrix dielectric function (DF), as the one of the random phase approximation (RPA), for a quasi-two-dimensional electron gas is revie wed. Calculation of matrix elements of screened interactions through t hose corresponding to bare interaction requires the inversion of this matrix. A method to invert such a four-index matrix is explained. Gene ral expressions for the form factor (FF) concerning electron-electron interaction in single heterostructures (SH) and quantum wells (QW) are derived when different dielectric constants at each side of an interf ace are considered. These problems are tightly connected with numerica l calculations for multisubband transport in such a systems. (C) 1997 Acta Metallurgica Inc.