Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements

Citation
K. Kalli et al., Nondestructive evaluation of metal contaminated silicon wafers using radiometric measurements, J APPL PHYS, 86(6), 1999, pp. 3064-3067
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
6
Year of publication
1999
Pages
3064 - 3067
Database
ISI
SICI code
0021-8979(19990915)86:6<3064:NEOMCS>2.0.ZU;2-3
Abstract
We have performed nondestructive measurements on metal contaminated silicon wafers using photothermal radiometric measurements. Data were collected as a function of modulation frequency and time, showing clear distinctions be tween the different samples examined. The sensitivity of this technique to different forms of metallic contamination is examined. A qualitative and se miquantitative comparison is made between theory and experiment.(C) 1999 Am erican Institute of Physics. [S0021-8979(99)00618-0].