Self-organized growth of zero-, one-, and two-dimensional nanoscale SiC structures by oxygen-enhanced hydrogen plasma sputtering

A variety of nanoscale SiC structures, in particular the grain, whisker, an d flake, displaying, respectively, zero, one, and two dimensions, has been grown by hydrogen plasma sputtering of a SiC target in the presence of a sm all amount of oxygen. Growth of the different nanoscale structures takes pl ace by various mechanisms. The SiC whiskers are initiated by SiO2 seed crys tals in the SiC film matrix at temperatures around 700 degrees C. On the ot her hand, the grains and flakes are separated by insertions of amorphous an d graphitic carbon in the films at higher temperatures, around 950 degrees C. Both these processes result from the reaction of oxygen with the growing SiC film. (C) 1999 American Institute of Physics. [S0021-8979(99)04818-5].