Aligned island formation using step-band networks on Si(111)

Citation
Y. Homma et al., Aligned island formation using step-band networks on Si(111), J APPL PHYS, 86(6), 1999, pp. 3083-3088
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
6
Year of publication
1999
Pages
3083 - 3088
Database
ISI
SICI code
0021-8979(19990915)86:6<3083:AIFUSN>2.0.ZU;2-K
Abstract
We have achieved control of island formation using a patterned Si(111) surf ace with a periodic array of atomic-step bands and holes. Liquid metals, Au -Si or Ga, migrate on the patterned surface by annealing and form an island at a particular position in each pattern unit. The islands show highly uni form positions and narrow size distributions. To obtain such good uniformit y, the diffusion length of surface atoms should be comparable with the patt ern period. High mobility on step bands is also a necessary factor. Periodi c arrays of Au islands are used as seeds for selective growth using a vapor -liquid-solid reaction. (C) 1999 American Institute of Physics. [S0021-8979 (99)04218-8].