Zq. Lu et al., Giant magnetoresistive spin valves with a strong exchange bias field and aweak interlayer coupling field, J APPL PHYS, 86(6), 1999, pp. 3285-3289
Spin valve multilayers exhibiting enhanced giant magnetoresistive (GMR) eff
ect and weak interlayer coupling as well as strong exchange biasing were fa
bricated by a two-step deposition procedure. The down sublayers (i.e., buff
er layer Ta/free layer NiFe/interlayer Cu) were deposited at a lower argon
pressure, then the upper sublayers (i.e., pinned layer NiFe/pinning layer F
eMn/cover layer Ta) were deposited at a higher argon pressure. The former p
romoted formation of the strong (111) textures, smooth interfaces, and dens
e Cu film, resulting in a weak interlayer coupling. The latter promoted sma
ll domains and less diffusive interfaces, resulting in a strong exchange bi
asing and an enhanced GMR ratio. This shows that independent control of mag
netoresistance, interlayer coupling, and exchange biasing is possible. (C)
1999 American Institute of Physics. [S0021-8979(99)06518-4].