Giant magnetoresistive spin valves with a strong exchange bias field and aweak interlayer coupling field

Citation
Zq. Lu et al., Giant magnetoresistive spin valves with a strong exchange bias field and aweak interlayer coupling field, J APPL PHYS, 86(6), 1999, pp. 3285-3289
Citations number
19
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
6
Year of publication
1999
Pages
3285 - 3289
Database
ISI
SICI code
0021-8979(19990915)86:6<3285:GMSVWA>2.0.ZU;2-H
Abstract
Spin valve multilayers exhibiting enhanced giant magnetoresistive (GMR) eff ect and weak interlayer coupling as well as strong exchange biasing were fa bricated by a two-step deposition procedure. The down sublayers (i.e., buff er layer Ta/free layer NiFe/interlayer Cu) were deposited at a lower argon pressure, then the upper sublayers (i.e., pinned layer NiFe/pinning layer F eMn/cover layer Ta) were deposited at a higher argon pressure. The former p romoted formation of the strong (111) textures, smooth interfaces, and dens e Cu film, resulting in a weak interlayer coupling. The latter promoted sma ll domains and less diffusive interfaces, resulting in a strong exchange bi asing and an enhanced GMR ratio. This shows that independent control of mag netoresistance, interlayer coupling, and exchange biasing is possible. (C) 1999 American Institute of Physics. [S0021-8979(99)06518-4].