Study of magnetization and crystallization in sputter deposited LiZn ferrite thin films

Citation
J. Dash et al., Study of magnetization and crystallization in sputter deposited LiZn ferrite thin films, J APPL PHYS, 86(6), 1999, pp. 3303-3311
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
00218979 → ACNP
Volume
86
Issue
6
Year of publication
1999
Pages
3303 - 3311
Database
ISI
SICI code
0021-8979(19990915)86:6<3303:SOMACI>2.0.ZU;2-F
Abstract
LiZn ferrite films of composition LiO0.5-x/2Mn0.1ZnxFe2.35-x/2O4 with x = 0 .32 were rf sputter deposited on fused quartz substrates at ambient tempera ture. The as-deposited films were found by x-ray diffraction to be amorphou s but magnetic, and showed large high field susceptibility. The films were studied after they were annealed at various temperatures up to 850 degrees C. It was observed that the films crystallize upon annealing and the value of the saturation magnetization increases with annealing temperature. The h igh field susceptibility, on the other hand, decreases with increasing anne al temperature. The measured ferromagnetic resonance spectra of these films indicated that the films consist of at least two different magnetic materi als. A significant portion in the film crystallizes and the value of satura tion magnetization of this portion tends to the bulk value as annealing tem perature is increased. However, a small portion of the film remains in a hi ghly defective state all through, even up to annealing temperatures of 850 degrees C. The high field susceptibility data indicates that point defects could play an important role in determining the magnetic properties of thes e films. (C) 1999 American Institute of Physics. [S0021-8979(99)07018-8].