A transient model for the sublimation growth of silicon carbide single crystals

Authors
Bubner, N Klein, O Philip, P Sprekels, J Wilmanski, K
Citation
N. Bubner et al., A transient model for the sublimation growth of silicon carbide single crystals, J CRYST GR, 205(3), 1999, pp. 294-304
Citations number
6
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
00220248 → ACNP
Volume
205
Issue
3
Year of publication
1999
Pages
294 - 304
Database
ISI
SICI code
0022-0248(199908)205:3<294:ATMFTS>2.0.ZU;2-J
Abstract
We present a transient model for the Modified Lely. Method for the sublimat ion growth of SiC single crystals which consists of all conservation laws i ncluding reaction-diffusion equations. The model is based on a mixture theo ry for the gas phase. First numerical results illustrate the influence of t he geometrical set-up inside the reactor on the evolution of the temperatur e distribution. (C) 1999 Elsevier Science B.V. All rights reserved.