Strain-induced perpendicular magnetization in TbFe2(111) thin films on LiNbO3

By creating the necessary state of epitaxial strain the Laves phase compoun d TbFe2 was grown as a thin film with the magnetization perpendicular to th e (1 1 1) growth plane onto a piezoelectric substrate. The material was dep osited by molecular beam epitaxy on LiNbO3(1 1 1) buffered successively by Ti(0 0 0 1) and then Mo(1 1 0). Differential contraction after growth durin g cooling to room temperature places the magnetic film under a 0.4% compres sive strain, whence magnetoelastic coupling creates the desired magnetic po larization. (C) 1993 Elsevier Science B.V. All rights reserved.