Production of CuInSe2 thin films by a sequential processes of evaporationsand selenization

Thin films of copper indium diselenide (CuInSe2) were prepared by selenizat ion of CuInSe2-Cu-In multilayered structure on glass substrate. The seleniz ation procedure was carried out in a vapour of elemental selenium in a vacu um chamber. The obtained films were characterised by XRD and SEM measuremen ts. The effects of substrate temperature on the structural, electrical and optical properties were studied. It was found that single phase CuInSe2 thi n films with significant adhesion to substrate can be produced by selenizat ion of CuInSe2-Cu-In multilayered structure at 450 degrees C, when the firs t non single phase CuInSe2 layer was deposited at substrate temperature of 400 degrees C. The thin films were found to be direct band gap semiconducto rs with a band gap of 0.97 eV. (C) 1999 Kluwer Academic Publishers.